JANTXV2N2919

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Configuration :

SEPARATE, 2 ELEMENTS

Collector Base Voltage (VCBO) :

70V

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector (Ic) (Max) :

30mA

Published :

2007

Current - Collector Cutoff (Max) :

10μA ICBO

Max Collector Current :

30mA

Pin Count :

8

Factory Lead Time :

23 Weeks

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

JESD-609 Code :

e0

Number of Elements :

2

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Terminal Form :

Wire

Number of Terminations :

6

Transistor Type :

2 NPN (Dual)

Series :

Military, MIL-PRF-19500/355

Transition Frequency :

60MHz

Terminal Position :

BOTTOM

Reference Standard :

MIL-19500/355J

Number of Pins :

6

Pbfree Code :

No

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Qualification Status :

Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Packaging :

Bulk

Operating Temperature :

200°C TJ

Package / Case :

TO-78-6 Metal Can

HTS Code :

8541.21.00.95

Polarity/Channel Type :

NPN