JANTXV2N2907AUB

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Mfr.Part #
JANTXV2N2907AUB
Manufacturer
Microchip Technology
Package / Case
4-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 60V 0.6A UB
Stock
30,429
In Stock :
30,429

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Packaging :
Bulk
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Min Operating Temperature :
-65°C
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Published :
2007
RoHS Status :
Non-RoHS Compliant
Current - Collector (Ic) (Max) :
600mA
Lead Free :
Contains Lead
Polarity :
PNP
Collector Emitter Breakdown Voltage :
60V
Transistor Type :
PNP
Power - Max :
500mW
Number of Pins :
3
Operating Temperature :
-65°C~200°C TJ
Supplier Device Package :
UB
Mount :
Surface Mount
Factory Lead Time :
23 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
60V
Collector Base Voltage (VCBO) :
60V
Max Operating Temperature :
200°C
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Package / Case :
4-SMD, No Lead
Current - Collector Cutoff (Max) :
50nA
Series :
Military, MIL-PRF-19500/291
Max Collector Current :
600mA
Max Power Dissipation :
500mW
Power Dissipation :
500mW
Mounting Type :
Surface Mount
Voltage - Collector Emitter Breakdown (Max) :
60V
Datasheets
JANTXV2N2907AUB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2907AUB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Package / Case:4-SMD, No Lead, Mounting Type:Surface Mount, JANTXV2N2907AUB pinout, JANTXV2N2907AUB datasheet PDF, JANTXV2N2907AUB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2907AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANTXV2N2907AUB


PNP -65°C~200°C TJ 50nA 1 Elements 4-SMD, No Lead Bulk Surface Mount

JANTXV2N2907AUB Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The product comes in the supplier device package of UB.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 600mA volts at its maximum.

JANTXV2N2907AUB Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


JANTXV2N2907AUB Applications


There are a lot of Microsemi Corporation
JANTXV2N2907AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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