JANTXV2N2907AP
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- Mfr.Part #
- JANTXV2N2907AP
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 11,114
- In Stock ：
- 11,114
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500 mW
- RoHS :
- N
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Product Status :
- Active
- Package :
- Bulk
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector (Ic) (Max) :
- 600 mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-18 (TO-206AA)
- Product Category :
- Bipolar Transistors - BJT
- Manufacturer :
- Microchip
- Series :
- Military, MIL-PRF-19500/291
- Brand :
- Microchip / Microsemi
- Subcategory :
- Transistors
- Datasheets
- JANTXV2N2907AP
PNP -65°C ~ 200°C (TJ) 50nA TO-206AA, TO-18-3 Metal Can Through Hole
JANTXV2N2907AP Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-18 (TO-206AA).Detection of Collector Emitter Breakdown at 60 V maximal voltage is present.
JANTXV2N2907AP Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JANTXV2N2907AP Applications
There are a lot of Microchip Technology
JANTXV2N2907AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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