JANTXV2N2906AL
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- Mfr.Part #
- JANTXV2N2906AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 17,021
- In Stock ：
- 17,021
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- HTS Code :
- 8541.21.00.95
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Current - Collector Cutoff (Max) :
- 50nA
- Radiation Hardening :
- No
- Max Power Dissipation :
- 400mW
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Max Collector Current :
- 600mA
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 45ns
- Power - Max :
- 500mW
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Series :
- Military, MIL-PRF-19500/291
- Operating Temperature :
- -65°C~200°C TJ
- Reference Standard :
- MIL-19500/291
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Datasheets
- JANTXV2N2906AL
PNP -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N2906AL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 600mA volts can be achieved.
JANTXV2N2906AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JANTXV2N2906AL Applications
There are a lot of Microsemi Corporation
JANTXV2N2906AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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