JANTXV2N2905A
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- Mfr.Part #
- JANTXV2N2905A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO39
- Stock
- 36,053
- In Stock ：
- 36,053
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/290
- Power - Max :
- 800mW
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 600mW
- Published :
- 2007
- Factory Lead Time :
- 23 Weeks
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- Turn On Time-Max (ton) :
- 45ns
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1μA
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Qualified
- Transition Frequency :
- 200MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pin Count :
- 2
- Collector Emitter Breakdown Voltage :
- 60V
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Bulk
- Datasheets
- JANTXV2N2905A
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N2905A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.
JANTXV2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N2905A Applications
There are a lot of Microsemi Corporation
JANTXV2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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