JANTXV2N2880
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- Mfr.Part #
- JANTXV2N2880
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO59
- Stock
- 7,445
- In Stock ：
- 7,445
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- UPPER
- Qualification Status :
- Qualified
- Max Collector Current :
- 5A
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 24 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Pbfree Code :
- No
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Published :
- 2007
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- Terminal Form :
- UNSPECIFIED
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Stud Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 110V
- Current - Collector Cutoff (Max) :
- 20μA
- Series :
- Military, MIL-PRF-19500/315
- Mount :
- Stud
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 8V
- Power Dissipation :
- 2W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Transition Frequency :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JANTXV2N2880
NPN -65°C~200°C TJ 20μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Stud Mount
JANTXV2N2880 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
JANTXV2N2880 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 8V
a transition frequency of 30MHz
JANTXV2N2880 Applications
There are a lot of Microsemi Corporation
JANTXV2N2880 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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