JANTXV2N2605
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- Mfr.Part #
- JANTXV2N2605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A TO46-3
- Stock
- 7,780
- In Stock ：
- 7,780
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 400mW
- Number of Terminations :
- 3
- Qualification Status :
- Qualified
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Power - Max :
- 400mW
- Current - Collector Cutoff (Max) :
- 10nA
- Series :
- Military, MIL-PRF-19500/354
- Factory Lead Time :
- 23 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Configuration :
- Single
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 300mV
- Max Collector Current :
- 30mA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 70V
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Pbfree Code :
- No
- Datasheets
- JANTXV2N2605
PNP -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTXV2N2605 Overview
DC current gain in this device equals 100 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 500μA, 10mA.In extreme cases, the collector current can be as low as 30mA volts.
JANTXV2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
JANTXV2N2605 Applications
There are a lot of Microsemi Corporation
JANTXV2N2605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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