JANTXV2N2222AUB
- Mfr.Part #
- JANTXV2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 37,108
- In Stock :
- 37,108
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-SMD, No Lead
- Lead Free :
- Contains Lead
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Collector Base Voltage (VCBO) :
- 75V
- Max Junction Temperature (Tj) :
- 200°C
- Max Operating Temperature :
- 200°C
- Power - Max :
- 500mW
- Polarity :
- NPN
- Mount :
- Surface Mount
- Supplier Device Package :
- UB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 1.42mm
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/255
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Max Collector Current :
- 800mA
- hFE Min :
- 30
- Current - Collector (Ic) (Max) :
- 800mA
- Min Operating Temperature :
- -65°C
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Published :
- 2007
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- JANTXV2N2222AUB

NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount
JANTXV2N2222AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Supplier package UB contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.
JANTXV2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTXV2N2222AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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