JANTXV2N2222AL
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- Mfr.Part #
- JANTXV2N2222AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 30,760
- In Stock ：
- 30,760
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reference Standard :
- MIL-19500/255
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector Cutoff (Max) :
- 50nA
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 800mA
- Number of Terminations :
- 3
- Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Pin Count :
- 3
- Series :
- Military, MIL-PRF-19500/255
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 1V
- Power - Max :
- 500mW
- Factory Lead Time :
- 23 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Datasheets
- JANTXV2N2222AL
NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N2222AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JANTXV2N2222AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JANTXV2N2222AL Applications
There are a lot of Microsemi Corporation
JANTXV2N2222AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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