JANTXV2N2222A

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Mfr.Part #
JANTXV2N2222A
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 0.8A TO18
Stock
49,573
In Stock :
49,573

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-18 (TO-206AA)
Operating Temperature :
-65°C~200°C TJ
Polarity :
NPN
Collector Emitter Voltage (VCEO) :
50V
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Current - Collector (Ic) (Max) :
800mA
Power - Max :
500mW
Series :
Military, MIL-PRF-19500/255
Power Dissipation :
500mW
Voltage - Collector Emitter Breakdown (Max) :
50V
Transistor Type :
NPN
Max Power Dissipation :
500mW
Min Operating Temperature :
-65°C
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
50V
Packaging :
Bulk
Published :
2007
Factory Lead Time :
8 Weeks
Package / Case :
TO-206AA, TO-18-3 Metal Can
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount :
Through Hole
Collector Base Voltage (VCBO) :
75V
RoHS Status :
Non-RoHS Compliant
Max Collector Current :
800mA
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Max Operating Temperature :
200°C
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Current - Collector Cutoff (Max) :
50nA
Datasheets
JANTXV2N2222A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2222A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-206AA, TO-18-3 Metal Can, JANTXV2N2222A pinout, JANTXV2N2222A datasheet PDF, JANTXV2N2222A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2222A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANTXV2N2222A


NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

JANTXV2N2222A Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package TO-18 (TO-206AA) comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.

JANTXV2N2222A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)


JANTXV2N2222A Applications


There are a lot of Microsemi Corporation
JANTXV2N2222A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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