JANTXV2N2219AL
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- Mfr.Part #
- JANTXV2N2219AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 39,444
- In Stock ：
- 39,444
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~200°C TJ
- Number of Pins :
- 3
- Max Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Power Dissipation :
- 800mW
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10nA
- Packaging :
- Bulk
- Published :
- 2007
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Series :
- Military, MIL-PRF-19500/251
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 23 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Configuration :
- Single
- Datasheets
- JANTXV2N2219AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N2219AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 800mA volts.
JANTXV2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTXV2N2219AL Applications
There are a lot of Microsemi Corporation
JANTXV2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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