JANTXV2N2219
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- Mfr.Part #
- JANTXV2N2219
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO205AD
- Stock
- 44,088
- In Stock ：
- 44,088
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 800mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 800mW
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 800mW
- Series :
- Military, MIL-PRF-19500/251
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~200°C TJ
- Max Collector Current :
- 800mA
- Max Operating Temperature :
- 200°C
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 800mA
- Supplier Device Package :
- TO-205AD
- Polarity :
- NPN
- Published :
- 2007
- Factory Lead Time :
- 23 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- JANTXV2N2219
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N2219A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.This product comes in a TO-205AD device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
JANTXV2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-205AD
JANTXV2N2219A Applications
There are a lot of Microsemi Corporation
JANTXV2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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