JANTX2N918
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- Mfr.Part #
- JANTX2N918
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A
- Stock
- 45,453
- In Stock ：
- 45,453
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Packaging :
- Bulk
- Max Collector Current :
- 50mA
- Pin Count :
- 3
- Configuration :
- Single
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Power - Max :
- 200mW
- Package / Case :
- 4-SMD, No Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Series :
- Military, MIL-PRF-19500/301
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Max Power Dissipation :
- 200mW
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Transistor Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-30 Code :
- R-CDSO-N3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Contact Plating :
- Lead, Tin
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- RoHS Status :
- Non-RoHS Compliant
- Reference Standard :
- MIL-19500/301H
- Mount :
- Surface Mount
- Collector-Base Capacitance-Max :
- 3pF
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 15V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Terminations :
- 3
- Factory Lead Time :
- 23 Weeks
- Terminal Position :
- Dual
- Datasheets
- JANTX2N918
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 4-SMD, No Lead Bulk Surface Mount
JANTX2N918UB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 3mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 1mA, 10mA.Collector current can be as low as 50mA volts at its maximum.
JANTX2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
JANTX2N918UB Applications
There are a lot of Microsemi Corporation
JANTX2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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