JANTX2N7370
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- Mfr.Part #
- JANTX2N7370
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO254AA
- Stock
- 26,975
- In Stock ：
- 26,975
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/624
- Power - Max :
- 100W
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Terminal Form :
- PIN/PEG
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Polarity :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Qualification Status :
- Qualified
- Collector Emitter Saturation Voltage :
- 3V
- Current - Collector (Ic) (Max) :
- 12A
- Collector Base Voltage (VCBO) :
- 100V
- JESD-30 Code :
- S-MSFM-P3
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Datasheets
- JANTX2N7370
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JANTX2N7370 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTX2N7370 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N7370 Applications
There are a lot of Microsemi Corporation
JANTX2N7370 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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