JANTX2N6353
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- Mfr.Part #
- JANTX2N6353
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 5A TO66
- Stock
- 11,037
- In Stock ：
- 11,037
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Current - Collector (Ic) (Max) :
- 5A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Package / Case :
- TO-213AA, TO-66-2
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 150V
- Polarity :
- NPN
- Number of Elements :
- 1
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Published :
- 2007
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 150V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN - Darlington
- Emitter Base Voltage (VEBO) :
- 12V
- Series :
- Military, MIL-PRF-19500/472
- Power - Max :
- 2W
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 125°C
- Supplier Device Package :
- TO-66 (TO-213AA)
- Datasheets
- JANTX2N6353
NPN - Darlington -65°C~200°C TJ 1 Elements TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6353 Overview
In this device, the DC current gain is 1000 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 10mA, 5A.With the emitter base voltage set at 12V, an efficient operation can be achieved.Product comes in the supplier's device package TO-66 (TO-213AA).There is a 150V maximal voltage in the device due to collector-emitter breakdown.
JANTX2N6353 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
the supplier device package of TO-66 (TO-213AA)
JANTX2N6353 Applications
There are a lot of Microsemi Corporation
JANTX2N6353 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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