JANTX2N6352
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- Mfr.Part #
- JANTX2N6352
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 5A TO66
- Stock
- 44,589
- In Stock ：
- 44,589
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 5A 5V
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Lead Free :
- Contains Lead
- Polarity :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 5A
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 2W
- Number of Pins :
- 4
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 20 Weeks
- Element Configuration :
- Single
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- Published :
- 2002
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/472
- Pin Count :
- 4
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN - Darlington
- JESD-30 Code :
- O-MBCY-W3
- Max Collector Current :
- 5A
- Collector Emitter Saturation Voltage :
- 1.5V
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 12V
- Package / Case :
- TO-213AA, TO-66-2
- Datasheets
- JANTX2N6352
NPN - Darlington -65°C~200°C TJ 1 Elements 3 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6352 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 5A 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 5mA, 5A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
JANTX2N6352 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JANTX2N6352 Applications
There are a lot of Microsemi Corporation
JANTX2N6352 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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