JANTX2N6351
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- Mfr.Part #
- JANTX2N6351
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AC, TO-33-4 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 5A TO33
- Stock
- 47,527
- In Stock ：
- 47,527
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 5A
- Power - Max :
- 1W
- Published :
- 2002
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 4
- Factory Lead Time :
- 20 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Collector Emitter Saturation Voltage :
- 2.5V
- Polarity :
- NPN
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/472
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-205AC, TO-33-4 Metal Can
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 150V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Collector Current :
- 5A
- Collector Base Voltage (VCBO) :
- 150V
- Turn On Time-Max (ton) :
- 500ns
- Number of Pins :
- 4
- Mount :
- Through Hole
- Datasheets
- JANTX2N6351
NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole
JANTX2N6351 Overview
In this device, the DC current gain is 1000 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 10mA, 5A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
JANTX2N6351 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
JANTX2N6351 Applications
There are a lot of Microsemi Corporation
JANTX2N6351 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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