JANTX2N6350

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Mfr.Part #
JANTX2N6350
Manufacturer
Microchip Technology
Package / Case
TO-205AC, TO-33-4 Metal Can
Datasheet
Download
Description
TRANS NPN DARL 80V 5A TO33
Stock
35,695
In Stock :
35,695

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
4
Published :
2002
Factory Lead Time :
20 Weeks
Collector Base Voltage (VCBO) :
80V
Pin Count :
4
Pbfree Code :
No
Collector Emitter Voltage (VCEO) :
80V
Package / Case :
TO-205AC, TO-33-4 Metal Can
Number of Pins :
4
Radiation Hardening :
No
Polarity :
NPN
JESD-609 Code :
e0
Mounting Type :
Through Hole
Terminal Form :
Wire
Element Configuration :
Single
Series :
Military, MIL-PRF-19500/472
Terminal Finish :
Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
1.5V
Power - Max :
1W
Operating Temperature :
-65°C~200°C TJ
Emitter Base Voltage (VEBO) :
12V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 5mA, 5A
Lifecycle Status :
IN PRODUCTION (Last Updated: 4 weeks ago)
Turn On Time-Max (ton) :
500ns
Packaging :
Bulk
Qualification Status :
Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 5A 5V
RoHS Status :
Non-RoHS Compliant
Transistor Element Material :
SILICON
Mount :
Through Hole
Max Collector Current :
5A
Transistor Type :
NPN - Darlington
Case Connection :
COLLECTOR
Terminal Position :
BOTTOM
Number of Elements :
1
Datasheets
JANTX2N6350
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTX2N6350 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:TO-205AC, TO-33-4 Metal Can, Number of Pins:4, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, JANTX2N6350 pinout, JANTX2N6350 datasheet PDF, JANTX2N6350 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTX2N6350 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole

JANTX2N6350 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 5A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 5mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.During maximum operation, collector current can be as low as 5A volts.

JANTX2N6350 Features


the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V


JANTX2N6350 Applications


There are a lot of Microsemi Corporation
JANTX2N6350 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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