JANTX2N6308
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- Mfr.Part #
- JANTX2N6308
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 8A TO204AA
- Stock
- 28,834
- In Stock ：
- 28,834
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 20 Weeks
- Max Collector Current :
- 8A
- Number of Terminations :
- 2
- Configuration :
- Single
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 125W
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/498
- Emitter Base Voltage (VEBO) :
- 8V
- Mount :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Qualification Status :
- Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 3A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 125W
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 2
- Published :
- 2002
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 350V
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Base Voltage (VCBO) :
- 700V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Package / Case :
- TO-204AA, TO-3
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Lead, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 2.67A, 8A
- Datasheets
- JANTX2N6308
NPN -65°C~200°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Bulk Through Hole
JANTX2N6308 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 3A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 2.67A, 8A.The emitter base voltage can be kept at 8V for high efficiency.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
JANTX2N6308 Features
the DC current gain for this device is 12 @ 3A 5V
the vce saturation(Max) is 5V @ 2.67A, 8A
the emitter base voltage is kept at 8V
JANTX2N6308 Applications
There are a lot of Microsemi Corporation
JANTX2N6308 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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