JANTX2N6301P
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- Mfr.Part #
- JANTX2N6301P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 23,121
- In Stock ：
- 23,121
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Package :
- Bulk
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Package / Case :
- TO-213AA, TO-66-2
- Series :
- -
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 500μA
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A, 3V
- Supplier Device Package :
- TO-66 (TO-213AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Subcategory :
- Transistors
- Transistor Type :
- NPN - Darlington
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Power - Max :
- 75 W
- Current - Collector (Ic) (Max) :
- 8 A
- Datasheets
- JANTX2N6301P
NPN - Darlington -55°C ~ 200°C (TJ) 500μA TO-213AA, TO-66-2 Through Hole
JANTX2N6301P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 4A, 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 80mA, 8A.The product comes in the supplier device package of TO-66 (TO-213AA).A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANTX2N6301P Features
the DC current gain for this device is 750 @ 4A, 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of TO-66 (TO-213AA)
JANTX2N6301P Applications
There are a lot of Microchip Technology
JANTX2N6301P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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