JANTX2N6299
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- Mfr.Part #
- JANTX2N6299
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-213AA, TO-66-2
- Number of Terminations :
- 2
- Published :
- 2002
- Polarity :
- PNP
- Radiation Hardening :
- No
- Max Collector Current :
- 500μA
- Transistor Type :
- PNP - Darlington
- Terminal Form :
- PIN/PEG
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Pin Count :
- 3
- Contact Plating :
- Lead, Tin
- Qualification Status :
- Qualified
- Operating Temperature :
- -65°C~175°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Series :
- Military, MIL-PRF-19500/540
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 64W
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 64W
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 2V
- Mount :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector (Ic) (Max) :
- 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTX2N6299
PNP - Darlington -65°C~175°C TJ 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6299 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 500μA volts.
JANTX2N6299 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTX2N6299 Applications
There are a lot of Microsemi Corporation
JANTX2N6299 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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