JANTX2N6213
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- Mfr.Part #
- JANTX2N6213
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 350V 2A TO66
- Stock
- 17,778
- In Stock ：
- 17,778
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBFM-P2
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A 5V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 125mA, 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Number of Terminations :
- 2
- Transition Frequency :
- 20MHz
- Max Power Dissipation :
- 3W
- Series :
- Military, MIL-PRF-19500/461
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Package / Case :
- TO-213AA, TO-66-2
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Collector Emitter Voltage (VCEO) :
- 350V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 5mA
- Number of Pins :
- 3
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Power Dissipation :
- 3W
- Max Collector Current :
- 2A
- Datasheets
- JANTX2N6213
PNP -55°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6213 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1A 5V.When VCE saturation is 2V @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 20MHz.A maximum collector current of 2A volts can be achieved.
JANTX2N6213 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 2V @ 125mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTX2N6213 Applications
There are a lot of Microsemi Corporation
JANTX2N6213 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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