JANTX2N6051
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- Mfr.Part #
- JANTX2N6051
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 12A TO204AA
- Stock
- 24,597
- In Stock ：
- 24,597
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Qualified
- Published :
- 2002
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Saturation Voltage :
- 3V
- Lead Free :
- Contains Lead
- Power - Max :
- 150W
- Transistor Type :
- PNP - Darlington
- Max Collector Current :
- 12A
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Case Connection :
- COLLECTOR
- Packaging :
- Bulk
- JESD-30 Code :
- O-MBFM-P2
- ECCN Code :
- EAR99
- Pin Count :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Series :
- Military, MIL-PRF-19500/501
- Current - Collector Cutoff (Max) :
- 1mA
- Terminal Form :
- PIN/PEG
- Datasheets
- JANTX2N6051
PNP - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6051 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 6A 3V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 12A volts can be achieved.
JANTX2N6051 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N6051 Applications
There are a lot of Microsemi Corporation
JANTX2N6051 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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