JANTX2N5794A
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- Mfr.Part #
- JANTX2N5794A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- PNP TRANSISTOR
- Stock
- 21,746
- In Stock ：
- 21,746
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-78-6 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Current - Collector (Ic) (Max) :
- 600mA
- Transistor Polarity :
- NPN
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Series :
- Military, MIL-PRF-19500/495
- Supplier Device Package :
- TO-78-6
- Package :
- Bulk
- Power - Max :
- 600mW
- Mounting Type :
- Through Hole
- Base Product Number :
- 2N5794
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Transistor Type :
- 2 NPN (Dual)
- Packaging :
- Bulk
- Datasheets
- JANTX2N5794A
2 NPN (Dual) -65°C ~ 200°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Bulk Through Hole
JANTX2N5794A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANTX2N5794A Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 900mV @ 30mA, 300mA
the supplier device package of TO-78-6
JANTX2N5794A Applications
There are a lot of Microchip
JANTX2N5794A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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