JANTX2N5793A
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- Mfr.Part #
- JANTX2N5793A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- PNP TRANSISTOR
- Stock
- 15,151
- In Stock ：
- 15,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Frequency - Transition :
- -
- Base Product Number :
- 2N5793
- Transistor Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Power - Max :
- 600mW
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Current - Collector (Ic) (Max) :
- 600mA
- Series :
- Military, MIL-PRF-19500/495
- Package / Case :
- TO-78-6 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Supplier Device Package :
- TO-78-6
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- 2 NPN (Dual)
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Package :
- Bulk
- Packaging :
- Bulk
- Product Status :
- Active
- Datasheets
- JANTX2N5793A
2 NPN (Dual) -65°C ~ 200°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Bulk Through Hole
JANTX2N5793A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 30mA, 300mA.The product comes in the supplier device package of TO-78-6.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
JANTX2N5793A Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 900mV @ 30mA, 300mA
the supplier device package of TO-78-6
JANTX2N5793A Applications
There are a lot of Microchip
JANTX2N5793A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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