JANTX2N5682
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- Mfr.Part #
- JANTX2N5682
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A TO39
- Stock
- 382
- In Stock ：
- 382
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Type :
- NPN
- Terminal Form :
- Wire
- Factory Lead Time :
- 20 Weeks
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2002
- Mount :
- Through Hole
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/583
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Transition Frequency :
- 30MHz
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- ECCN Code :
- EAR99
- Contact Plating :
- Lead, Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Collector Emitter Voltage (VCEO) :
- 120V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Datasheets
- JANTX2N5682
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5682 Overview
This device has a DC current gain of 40 @ 250mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 1A volts is possible.
JANTX2N5682 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTX2N5682 Applications
There are a lot of Microsemi Corporation
JANTX2N5682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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