JANTX2N5667S
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- Mfr.Part #
- JANTX2N5667S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO39
- Stock
- 6,709
- In Stock ：
- 6,709
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- JEDEC-95 Code :
- TO-5
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Current - Collector (Ic) (Max) :
- 5A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 400V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- HTS Code :
- 8541.29.00.95
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Terminal Form :
- PIN/PEG
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Contact Plating :
- Lead, Tin
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Series :
- Military, MIL-PRF-19500/455
- JESD-30 Code :
- O-MBFM-P2
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1.2W
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Reference Standard :
- MIL-19500/455E
- Pin Count :
- 2
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 200nA
- Collector Emitter Voltage (VCEO) :
- 300V
- Datasheets
- JANTX2N5667S
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5667S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 5A.During maximum operation, collector current can be as low as 5A volts.
JANTX2N5667S Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
JANTX2N5667S Applications
There are a lot of Microsemi Corporation
JANTX2N5667S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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