JANTX2N5667
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- Mfr.Part #
- JANTX2N5667
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO5
- Stock
- 36,196
- In Stock ：
- 36,196
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 20 Weeks
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 400V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Power Dissipation :
- 1.2W
- Pbfree Code :
- No
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Terminal Form :
- PIN/PEG
- Published :
- 2007
- Configuration :
- Single
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 200nA
- Number of Terminations :
- 2
- Contact Plating :
- Lead, Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Pin Count :
- 2
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.2W
- JESD-30 Code :
- O-MBFM-P2
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 5A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/455
- Datasheets
- JANTX2N5667
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N5667 Overview
In this device, the DC current gain is 25 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
JANTX2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
JANTX2N5667 Applications
There are a lot of Microsemi Corporation
JANTX2N5667 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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