JANTX2N5582
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- Mfr.Part #
- JANTX2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 2,107
- In Stock ：
- 2,107
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Contact Plating :
- Lead, Tin
- Collector Emitter Voltage (VCEO) :
- 50V
- Configuration :
- Single
- Terminal Form :
- Wire
- Max Collector Current :
- 800mA
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Published :
- 2002
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 23 Weeks
- Series :
- Military, MIL-PRF-19500/423
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- -55°C~200°C TJ
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 75V
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Datasheets
- JANTX2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N5582 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 800mA volts.
JANTX2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTX2N5582 Applications
There are a lot of Microsemi Corporation
JANTX2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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