JANTX2N5415P
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- Mfr.Part #
- JANTX2N5415P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 41,802
- In Stock ：
- 41,802
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5AA
- Current - Collector (Ic) (Max) :
- 1 A
- Package :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA, 10V
- Current - Collector Cutoff (Max) :
- 1mA
- Mounting Type :
- Through Hole
- RoHS :
- N
- Power - Max :
- 750 mW
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Subcategory :
- Transistors
- Transistor Type :
- PNP
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Frequency - Transition :
- -
- Brand :
- Microchip / Microsemi
- Series :
- Military, MIL-PRF-19500/485
- Datasheets
- JANTX2N5415P
PNP -65°C ~ 200°C (TJ) 1mA TO-205AA, TO-5-3 Metal Can Through Hole
JANTX2N5415P Overview
This device has a DC current gain of 30 @ 50mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-5AA.Detection of Collector Emitter Breakdown at 200 V maximal voltage is present.
JANTX2N5415P Features
the DC current gain for this device is 30 @ 50mA, 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the supplier device package of TO-5AA
JANTX2N5415P Applications
There are a lot of Microchip Technology
JANTX2N5415P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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