JANTX2N5415
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- Mfr.Part #
- JANTX2N5415
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 200V 1A TO5
- Stock
- 16,238
- In Stock ：
- 16,238
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Mount :
- Through Hole
- Power Dissipation :
- 750mW
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/485
- Collector Emitter Voltage (VCEO) :
- 200V
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- PNP
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Bulk
- Max Power Dissipation :
- 750mW
- JESD-30 Code :
- O-MBCY-W4
- Collector Base Voltage (VCBO) :
- 200V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Configuration :
- Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Max Collector Current :
- 1A
- Reference Standard :
- MILITARY STANDARD (USA)
- Transistor Type :
- PNP
- Factory Lead Time :
- 20 Weeks
- Number of Elements :
- 1
- Number of Terminations :
- 4
- Terminal Form :
- Wire
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Datasheets
- JANTX2N5415
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N5415 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 1A volts.
JANTX2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5415 Applications
There are a lot of Microsemi Corporation
JANTX2N5415 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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