JANTX2N5151
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- Mfr.Part #
- JANTX2N5151
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO39
- Stock
- 31,532
- In Stock ：
- 31,532
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 500ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/545
- Factory Lead Time :
- 20 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 60MHz
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 5.5V
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 2A
- Pbfree Code :
- No
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 50μA
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 5V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- JANTX2N5151
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5151 Overview
This device has a DC current gain of 30 @ 2.5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5.5V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 2A volts is possible.
JANTX2N5151 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 60MHz
JANTX2N5151 Applications
There are a lot of Microsemi Corporation
JANTX2N5151 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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