JANTX2N5014
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- Mfr.Part #
- JANTX2N5014
- Manufacturer
- Microsemi
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 900V 0.2A TO5
- Stock
- 31,847
- In Stock ：
- 31,847
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/727
- Supplier Device Package :
- TO-5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 900V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Published :
- 2007
- Current - Collector (Ic) (Max) :
- 200mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 1W
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JANTX2N5014
NPN -65°C~200°C TJ 10nA ICBO TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N5014 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 20mA 10V.This product comes in a TO-5 device package from the supplier.Device displays Collector Emitter Breakdown (900V maximal voltage).
JANTX2N5014 Features
the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-5
JANTX2N5014 Applications
There are a lot of Microsemi Corporation
JANTX2N5014 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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