JANTX2N4261UB
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- Mfr.Part #
- JANTX2N4261UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.03A UB
- Stock
- 23,440
- In Stock ：
- 23,440
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 1V
- Turn On Time-Max (ton) :
- 2.5ns
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 23 Weeks
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Base Voltage (VCBO) :
- 15V
- Emitter Base Voltage (VEBO) :
- 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-SMD, No Lead
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 4
- Series :
- Military, MIL-PRF-19500/511
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-CDSO-N4
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 1mA, 10mA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Max Collector Current :
- 30mA
- Pin Count :
- 3
- Datasheets
- JANTX2N4261UB
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTX2N4261UB Overview
This device has a DC current gain of 30 @ 10mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4.5V to achieve high efficiency.The maximum collector current is 30mA volts.
JANTX2N4261UB Features
the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 350mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
JANTX2N4261UB Applications
There are a lot of Microsemi Corporation
JANTX2N4261UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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