JANTX2N4239
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- Mfr.Part #
- JANTX2N4239
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO39
- Stock
- 8,391
- In Stock ：
- 8,391
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2002
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/581
- Max Collector Current :
- 1A
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Transition Frequency :
- 1MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Pbfree Code :
- No
- Datasheets
- JANTX2N4239
NPN -65°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N4239 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 250mA 1V.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 1MHz.A maximum collector current of 1A volts can be achieved.
JANTX2N4239 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 1MHz
JANTX2N4239 Applications
There are a lot of Microsemi Corporation
JANTX2N4239 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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