JANTX2N4150S
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- Mfr.Part #
- JANTX2N4150S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 70V 10A TO39
- Stock
- 294
- In Stock ：
- 294
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Qualified
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Turn Off Time-Max (toff) :
- 2000ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2007
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 20 Weeks
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Terminal Form :
- Wire
- Pin Count :
- 2
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 10A
- JEDEC-95 Code :
- TO-5
- Emitter Base Voltage (VEBO) :
- 10V
- Turn On Time-Max (ton) :
- 550ns
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 70V
- Packaging :
- Bulk
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/394
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- Configuration :
- Single
- Transition Frequency :
- 15MHz
- Datasheets
- JANTX2N4150S
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N4150S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 5A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.There is a transition frequency of 15MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
JANTX2N4150S Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz
JANTX2N4150S Applications
There are a lot of Microsemi Corporation
JANTX2N4150S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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