JANTX2N3999
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- Mfr.Part #
- JANTX2N3999
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO59
- Stock
- 26,660
- In Stock ：
- 26,660
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 2V
- Mounting Type :
- Chassis, Stud Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 20 Weeks
- Qualification Status :
- Qualified
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 8V
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Series :
- Military, MIL-PRF-19500/374
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2W
- Pin Count :
- 4
- Number of Pins :
- 4
- Current - Collector (Ic) (Max) :
- 10A
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-30 Code :
- O-MUPM-X3
- Polarity/Channel Type :
- NPN
- Mount :
- Stud
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Datasheets
- JANTX2N3999
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Chassis, Stud Mount
JANTX2N3999 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 2V.When VCE saturation is 2V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.
JANTX2N3999 Features
the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V
JANTX2N3999 Applications
There are a lot of Microsemi Corporation
JANTX2N3999 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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