JANTX2N3879
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- Mfr.Part #
- JANTX2N3879
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 75V 7A TO66
- Stock
- 2,306
- In Stock ：
- 2,306
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- PIN/PEG
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 75V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 400mA, 4A
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 35W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Number of Terminations :
- 2
- Series :
- Military, MIL-PRF-19500/526
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 35W
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 5V
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 25mA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 40MHz
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- JESD-30 Code :
- O-MBFM-P2
- Max Collector Current :
- 7A
- Mount :
- Through Hole
- Published :
- 2002
- Package / Case :
- TO-213AA, TO-66-2
- Collector Base Voltage (VCBO) :
- 120V
- Datasheets
- JANTX2N3879
NPN -65°C~200°C TJ 25mA ICBO 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N3879 Overview
In this device, the DC current gain is 20 @ 4A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 400mA, 4A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.40MHz is present in the transition frequency.Maximum collector currents can be below 7A volts.
JANTX2N3879 Features
the DC current gain for this device is 20 @ 4A 5V
the vce saturation(Max) is 1.2V @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 40MHz
JANTX2N3879 Applications
There are a lot of Microsemi Corporation
JANTX2N3879 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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