JANTX2N3810

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Number of Terminations :

6

Transistor Element Material :

SILICON

Package / Case :

TO-78-6 Metal Can

Pbfree Code :

No

Power Dissipation :

350mW

Polarity :

PNP

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Factory Lead Time :

23 Weeks

Max Power Dissipation :

350mW

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Reference Standard :

MIL-19500

JESD-609 Code :

e0

Mounting Type :

Through Hole

Number of Elements :

2

Mount :

Through Hole

Series :

Military, MIL-PRF-19500/336

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Qualified

Pin Count :

8

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

60V

Packaging :

Bulk

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Transistor Type :

2 PNP (Dual)

Operating Temperature :

-65°C~200°C TJ

Max Collector Current :

50mA

Published :

2007