JANTX2N3739
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- Mfr.Part #
- JANTX2N3739
- Manufacturer
- Microchip Technology
- Package / Case
- TO-66
- Datasheet
- Download
- Description
- TRANS NPN 300V 1A TO66
- Stock
- 553
- In Stock ：
- 553
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 25mA, 250mA
- Series :
- Military, MIL-PRF-19500/402
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 250mA 10V
- Pbfree Code :
- No
- Transition Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 325V
- Operating Temperature :
- -55°C~200°C TJ
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Package / Case :
- TO-66
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- O-MBFM-P2
- Max Power Dissipation :
- 20W
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Published :
- 2007
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Pin Count :
- 3
- Packaging :
- Bulk
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 20W
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANTX2N3739
NPN -55°C~200°C TJ 100μA ICBO 1 Elements 2 Terminations SILICON NPN TO-66 Bulk
JANTX2N3739 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 250mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 25mA, 250mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
JANTX2N3739 Features
the DC current gain for this device is 25 @ 250mA 10V
the vce saturation(Max) is 2.5V @ 25mA, 250mA
the emitter base voltage is kept at 6V
a transition frequency of 10MHz
JANTX2N3739 Applications
There are a lot of Microsemi Corporation
JANTX2N3739 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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