JANTX2N3700P
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- Mfr.Part #
- JANTX2N3700P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 31,386
- In Stock ：
- 31,386
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Supplier Device Package :
- TO-18 (TO-206AA)
- Brand :
- Microchip / Microsemi
- Package :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power - Max :
- 500 mW
- Current - Collector Cutoff (Max) :
- 10nA
- Frequency - Transition :
- -
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Mounting Type :
- Through Hole
- Subcategory :
- Transistors
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 1 A
- Series :
- Military, MIL-PRF-19500/391
- Datasheets
- JANTX2N3700P
NPN -65°C ~ 200°C (TJ) 10nA TO-206AA, TO-18-3 Metal Can Through Hole
JANTX2N3700P Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-18 (TO-206AA).There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
JANTX2N3700P Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JANTX2N3700P Applications
There are a lot of Microchip Technology
JANTX2N3700P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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