JANTX2N3637UB
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- Mfr.Part #
- JANTX2N3637UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A 3SMD
- Stock
- 37,823
- In Stock ：
- 37,823
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-SMD, No Lead
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Power - Max :
- 1.5W
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 175V
- Series :
- Military, MIL-PRF-19500/357
- Turn Off Time-Max (toff) :
- 650ns
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Turn On Time-Max (ton) :
- 200ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Factory Lead Time :
- 23 Weeks
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Current - Collector Cutoff (Max) :
- 10μA
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 175V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Pin Count :
- 3
- Number of Elements :
- 1
- Datasheets
- JANTX2N3637UB
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTX2N3637UB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTX2N3637UB Applications
There are a lot of Microsemi Corporation
JANTX2N3637UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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