JANTX2N3636L
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- Mfr.Part #
- JANTX2N3636L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 3,184
- In Stock ：
- 3,184
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.29.00.95
- Collector Emitter Voltage (VCEO) :
- 175V
- Packaging :
- Bulk
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 650ns
- Collector Base Voltage (VCBO) :
- 175V
- Factory Lead Time :
- 23 Weeks
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA
- Pbfree Code :
- No
- Turn On Time-Max (ton) :
- 200ns
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Series :
- Military, MIL-PRF-19500/357
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Pin Count :
- 3
- Transistor Type :
- PNP
- Power - Max :
- 1W
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 1A
- Datasheets
- JANTX2N3636L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3636L Overview
In this device, the DC current gain is 50 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTX2N3636L Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JANTX2N3636L Applications
There are a lot of Microsemi Corporation
JANTX2N3636L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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