JANTX2N3634
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- Mfr.Part #
- JANTX2N3634
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO39
- Stock
- 37,709
- In Stock ：
- 37,709
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Turn Off Time-Max (toff) :
- 650ns
- Transition Frequency :
- 150MHz
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Published :
- 2002
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 140V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 140V
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Pin Count :
- 2
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 200ns
- Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Series :
- Military, MIL-PRF-19500/357
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Max Collector Current :
- 1A
- Datasheets
- JANTX2N3634
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3634 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
JANTX2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTX2N3634 Applications
There are a lot of Microsemi Corporation
JANTX2N3634 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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