JANTX2N3585
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- Mfr.Part #
- JANTX2N3585
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 300V 2A TO66
- Stock
- 32,399
- In Stock ：
- 32,399
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 5mA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 125mA, 1A
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Base Voltage (VCBO) :
- 500V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 10V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 2.5W
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/384
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- Qualification Status :
- Qualified
- Package / Case :
- TO-213AA, TO-66-2
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Power Dissipation :
- 2.5W
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Pbfree Code :
- No
- Configuration :
- Single
- Datasheets
- JANTX2N3585
NPN -65°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N3585 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 125mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 2A volts.
JANTX2N3585 Features
the DC current gain for this device is 25 @ 1A 10V
the vce saturation(Max) is 750mV @ 125mA, 1A
the emitter base voltage is kept at 6V
JANTX2N3585 Applications
There are a lot of Microsemi Corporation
JANTX2N3585 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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