JANTX2N3501L
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- Mfr.Part #
- JANTX2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO5
- Stock
- 13,388
- In Stock ：
- 13,388
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 300mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Qualification Status :
- Qualified
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Published :
- 2007
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Series :
- Military, MIL-PRF-19500/366
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 150V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Number of Terminations :
- 3
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Factory Lead Time :
- 23 Weeks
- Datasheets
- JANTX2N3501L
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3501L Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 300mA volts is possible.
JANTX2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JANTX2N3501L Applications
There are a lot of Microsemi Corporation
JANTX2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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