JANTX2N3499

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Mfr.Part #
JANTX2N3499
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 100V 0.5A TO39
Stock
7,806
In Stock :
7,806

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Mount :
Through Hole
Max Power Dissipation :
1W
Series :
Military, MIL-PRF-19500/366
Terminal Form :
Wire
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
Non-RoHS Compliant
Packaging :
Bulk
Transistor Application :
SWITCHING
Published :
2002
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
100V
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Max Collector Current :
500mA
Current - Collector Cutoff (Max) :
10μA ICBO
Pbfree Code :
No
Terminal Finish :
Tin/Lead (Sn/Pb)
Number of Elements :
1
Pin Count :
2
Vce Saturation (Max) @ Ib, Ic :
600mV @ 30mA, 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Mounting Type :
Through Hole
Transition Frequency :
150MHz
Collector Base Voltage (VCBO) :
100V
Qualification Status :
Qualified
Case Connection :
COLLECTOR
Number of Pins :
3
Configuration :
Single
Number of Terminations :
3
JESD-609 Code :
e0
Transistor Element Material :
SILICON
Factory Lead Time :
23 Weeks
Package / Case :
TO-205AD, TO-39-3 Metal Can
Terminal Position :
BOTTOM
Operating Temperature :
-65°C~200°C TJ
Power Dissipation :
1W
Datasheets
JANTX2N3499
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTX2N3499 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, JANTX2N3499 pinout, JANTX2N3499 datasheet PDF, JANTX2N3499 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTX2N3499 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JANTX2N3499 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 600mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 500mA volts can be achieved.

JANTX2N3499 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


JANTX2N3499 Applications


There are a lot of Microsemi Corporation
JANTX2N3499 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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