JANTX2N3499
- Mfr.Part #
- JANTX2N3499
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO39
- Stock
- 7,806
- In Stock :
- 7,806
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Series :
- Military, MIL-PRF-19500/366
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Published :
- 2002
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 100V
- Qualification Status :
- Qualified
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Configuration :
- Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 1W
- Datasheets
- JANTX2N3499
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3499 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 600mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 500mA volts can be achieved.
JANTX2N3499 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
JANTX2N3499 Applications
There are a lot of Microsemi Corporation
JANTX2N3499 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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