JANTX2N3439P
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- Mfr.Part #
- JANTX2N3439P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 23,219
- In Stock ：
- 23,219
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Bipolar Transistors - BJT
- Operating Temperature :
- -55°C ~ 200°C
- Series :
- Military, MIL-PRF-19500/368
- Power - Max :
- 800 mW
- Package :
- Bulk
- Subcategory :
- Transistors
- RoHS :
- N
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector Cutoff (Max) :
- 2µA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Brand :
- Microchip / Microsemi
- Supplier Device Package :
- TO-39 (TO-205AD)
- Manufacturer :
- Microchip
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Current - Collector (Ic) (Max) :
- 1 A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- NPN
- Datasheets
- JANTX2N3439P
NPN -55°C ~ 200°C 2μA TO-205AD, TO-39-3 Metal Can Through Hole
JANTX2N3439P Overview
This device has a DC current gain of 40 @ 20mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).Product package TO-39 (TO-205AD) comes from the supplier.Collector Emitter Breakdown occurs at 350 VV - Maximum voltage.
JANTX2N3439P Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANTX2N3439P Applications
There are a lot of Microchip Technology
JANTX2N3439P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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