JANTX2N3439
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- Mfr.Part #
- JANTX2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO39
- Stock
- 22,842
- In Stock ：
- 22,842
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 450V
- Factory Lead Time :
- 20 Weeks
- Pin Count :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 350V
- Pbfree Code :
- No
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 2µA
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 350V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Power Dissipation :
- 800mW
- Terminal Form :
- Wire
- Max Power Dissipation :
- 800mW
- Emitter Base Voltage (VEBO) :
- 7V
- Series :
- Military, MIL-PRF-19500/368
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Transition Frequency :
- 15MHz
- Packaging :
- Bulk
- Datasheets
- JANTX2N3439
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3439 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 1A volts.
JANTX2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3439 Applications
There are a lot of Microsemi Corporation
JANTX2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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