JANTX2N3421P
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- Mfr.Part #
- JANTX2N3421P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 44,428
- In Stock ：
- 44,428
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- RoHS :
- N
- Current - Collector (Ic) (Max) :
- 3 A
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A, 2V
- Brand :
- Microchip / Microsemi
- Product Category :
- Bipolar Transistors - BJT
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Supplier Device Package :
- TO-5AA
- Power - Max :
- 1 W
- Series :
- Military, MIL-PRF-19500/393
- Package :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 5μA
- Datasheets
- JANTX2N3421P
NPN -65°C ~ 200°C (TJ) 5μA TO-205AA, TO-5-3 Metal Can Through Hole
JANTX2N3421P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 1A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.TO-5AA is the supplier device package for this product.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
JANTX2N3421P Features
the DC current gain for this device is 40 @ 1A, 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TO-5AA
JANTX2N3421P Applications
There are a lot of Microchip Technology
JANTX2N3421P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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